inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor IRF423 description silicon gate for fast switching at elevate rugged low drive requirements ease of paralleling applications high speed applications such as switching power supplies,ac and dcmotor controls relay and solenoid driver. absolute maximum ratings(t a =25 ) symbol arameter value unit v dss drain-source voltage (v gs =0) 450 v v gs gate-source voltage 20 v i d drain current-continuous@ tc=25 2.2 a p tot total dissipation@tc=25 50 w t j max. operating junction temperature -55~150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 2.5 /w r th j-a thermal resistance,junction to ambient 30 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor IRF423 electrical characteristics (t c =25 ) symbol parameter conditions min type max unit v (br)dss drain-source breakdown voltage v gs =0; i d =0.25ma 450 v v gs(th) gate threshold voltage v ds = v gs ; i d =250 a 2 4 v r ds(on) drain-source on-stage resistance v gs =10v; i d =1.4a 4 i gss gate source leakage current v gs = 20v;v ds =0 100 na i dss zero gate voltage drain current v ds =450v; v gs =0 250 ua v sd diode forward voltage i f =2.5a; v gs =0 1.4 v ciss input capacitance v ds =25v; v gs =0v; f t =1mhz 300 pf crss reverse transfer capacitance 75 coss output capacitance 20 tr rise time i d =2.5a; v dd =250v; r g =18 10 15 ns td(on) turn-on telay time 12 18 tf fall time 28 42 td(off) turn-off delay time 12 18 pdf pdffactory pro www.fineprint.cn
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